发明名称 |
Selective isotropic etch for titanium-based materials |
摘要 |
A process for etching a sacrificial layer of a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications of the process include the formation of integrated circuit structures and MEMS structures.
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申请公布号 |
US2005068608(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20030675263 |
申请日期 |
2003.09.30 |
申请人 |
CAMPBELL TIMOTHY S.;CHESIRE DANIEL P.;HINCKLEY KELLY;HEAD GREGORY A.;PATEL BENU B. |
发明人 |
CAMPBELL TIMOTHY S.;CHESIRE DANIEL P.;HINCKLEY KELLY;HEAD GREGORY A.;PATEL BENU B. |
分类号 |
B81B3/00;B81C1/00;C23F4/00;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/00;H01L29/82;G02B6/26 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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