发明名称 APPARATUS FOR LOW TEMPERATURE SEMICONDUCTOR FABRICATION
摘要 <p>In one aspect, a semiconductor fabrication system includes an air-tight housing in which an inert gas is admittable and exhaustible; and a plurality of deposition chambers positioned within the system. The apparatus includes a substrate (222), pedestal electrode (224), substrate power supply (236), gas inlet (232), mass flow controller (233), gas supply (28), vacuum pump system (234), pumping port (236), magnets (102, 104, 106, 108), targets (110, 120), electron confinement region (130), and power supply (140).</p>
申请公布号 WO2005028700(A1) 申请公布日期 2005.03.31
申请号 WO2004US29990 申请日期 2004.09.10
申请人 GLOBAL SILICON NET CORP.;NAGASHIMA, MAKOTO;SCHMIDT, DOMINIK 发明人 NAGASHIMA, MAKOTO;SCHMIDT, DOMINIK
分类号 H01J37/34;C23C14/35;(IPC1-7):C23C14/35 主分类号 H01J37/34
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