发明名称 METHOD FOR MANUFACTURING THROUGH HOLE ELECTRODE FOR WAFER
摘要 A method of manufacturing a through-hole electrode on a wafer is provided to acquire a high degree of via integration in comparison with an existing PCB(Printed Circuit Board) by forming a through-hole on the substrate and filling the through-hole by an electroplating method. One or more through-hole is formed on a substrate. An electroplating electrode is formed on an upper surface of one side of the substrate. A penetrating electrode(14) is formed by filling the through-hole with a conductor by using the electroplating electrode(14). A metal material except for the penetrating electrode(14) is removed therefrom.
申请公布号 KR20050030720(A) 申请公布日期 2005.03.31
申请号 KR20030066748 申请日期 2003.09.26
申请人 SUH, SOO JEONG 发明人 KIM, JANG HYUN;KIM, YOON SIK;LEE, DU HYUN;SUH, SOO JEONG
分类号 H05K3/42;(IPC1-7):H05K3/42 主分类号 H05K3/42
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