发明名称 |
METHOD FOR MANUFACTURING THROUGH HOLE ELECTRODE FOR WAFER |
摘要 |
A method of manufacturing a through-hole electrode on a wafer is provided to acquire a high degree of via integration in comparison with an existing PCB(Printed Circuit Board) by forming a through-hole on the substrate and filling the through-hole by an electroplating method. One or more through-hole is formed on a substrate. An electroplating electrode is formed on an upper surface of one side of the substrate. A penetrating electrode(14) is formed by filling the through-hole with a conductor by using the electroplating electrode(14). A metal material except for the penetrating electrode(14) is removed therefrom.
|
申请公布号 |
KR20050030720(A) |
申请公布日期 |
2005.03.31 |
申请号 |
KR20030066748 |
申请日期 |
2003.09.26 |
申请人 |
SUH, SOO JEONG |
发明人 |
KIM, JANG HYUN;KIM, YOON SIK;LEE, DU HYUN;SUH, SOO JEONG |
分类号 |
H05K3/42;(IPC1-7):H05K3/42 |
主分类号 |
H05K3/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|