| 发明名称 |
FILM DEPOSITING METHOD, METHOD OF FORMING CIRCUIT PATTERN, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a film depositing method which is high in efficiency and productivity and capable of forming a film of high reliability. SOLUTION: The film depositing method is carried out through the manner wherein a transfer layer 6 formed on a base 5 is transferred onto a work 1. The above method includes a process in which the surface of the work 1 is subjected to a surface treatment so as to improve the transfer layer 6 in adhesion to the work 1 by chemical interaction. COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2005085799(A) |
申请公布日期 |
2005.03.31 |
| 申请号 |
JP20030312770 |
申请日期 |
2003.09.04 |
| 申请人 |
SEIKO EPSON CORP |
发明人 |
TOYODA NAOYUKI |
| 分类号 |
G03F7/34;B05D1/28;B05D5/12;B05D7/00;B32B38/10;H01J9/02;H01J11/12;H01J11/22;H01J11/24;H01J11/26;H01J11/34;H01L21/20;H01L21/26;H01L21/28;H01L21/288;H01L21/3205;H01L21/336;H01L21/768;H01L29/786;H01L51/50;H05B33/10;H05K3/04;H05K3/20;H05K3/38;(IPC1-7):H01L21/336;H05B33/14;H01J11/02;H01L21/320 |
主分类号 |
G03F7/34 |
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