发明名称 Template layer formation
摘要 A process for forming a strained semiconductor layer. The process includes implanting ions into a semiconductor layer prior to performing a condensation process on the layer. The ions assist in diffusion of atoms (e.g. germanium) in the semiconductor layer and to increase the relaxation of the semiconductor layer. After the condensation process, the layer can be used as a template layer for forming a strained semiconductor layer.
申请公布号 US2005070053(A1) 申请公布日期 2005.03.31
申请号 US20040919922 申请日期 2004.08.17
申请人 SADAKA MARIAM G.;BARR ALEXANDER L.;NGUYEN BICH-YEN;THEAN VOON-YEW;WHITE TED R. 发明人 SADAKA MARIAM G.;BARR ALEXANDER L.;NGUYEN BICH-YEN;THEAN VOON-YEW;WHITE TED R.
分类号 H01L;H01L21/00;H01L21/338;(IPC1-7):H01L21/00 主分类号 H01L
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