发明名称 |
ORGANOIRIDIUM COMPOUND, PROCESS FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING FILM |
摘要 |
An organometallic compound which has a low melting point and excellent vaporization characteristics and can deposit a film on substrates at low temperatures; and a process for producing an iridium-containing film from the organometallic compound. A compound represented by the general formula [2] or the general formula [3]: [2] [3] is reacted with a compound represented by the general formula [4]: [4] to obtain an organoiridium compound represented by the general formula [1]: [1] [In the formulae, R1 represents hydrogen or lower alkyl; R2 represents lower alkyl; X represents halogeno; and M represents an alkali metal.] This compound is used as a raw material to produce an iridium-containing film. |
申请公布号 |
WO2005017950(A3) |
申请公布日期 |
2005.03.31 |
申请号 |
WO2004JP11796 |
申请日期 |
2004.08.11 |
申请人 |
TOSOH CORPORATION;SAGAMI CHEMICAL RESEARCH CENTER;KAWANO, KAZUHISA;TAKAMORI, MAYUMI;OSHIMA, NORIAKI |
发明人 |
KAWANO, KAZUHISA;TAKAMORI, MAYUMI;OSHIMA, NORIAKI |
分类号 |
C07F15/00;C07F17/00;C07F17/02;C23C16/18;H01L |
主分类号 |
C07F15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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