| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage element that can stably hold information, and at the same time, can record information with a small magnetic field, and to provide a magnetic memory. SOLUTION: The magnetic storage element 10 is constituted of a plurality of magnetic layers 11 and 12 containing storage layers 1, and auxiliary magnetic layers 2 which are changed in magnetized state by external magnetic fields and divided by nonmagnetic layers 13; and causes magnetic interactions for magnetizing the adjacent magnetic layers 11 and 12 of the auxiliary magnetic layers 2 in anti-parallel states. In addition, the sum total of the amounts of magnetization of the even numbered magnetic layers 12 of the auxiliary magnetic layers 2 is almost equal to that of the amount of magnetization of the odd numbered magnetic layers 11 of the auxiliary magnetic layers 2. The magnetic memory has magnetic storage elements 10 thus constituted and first and second wirings which intersect with each other. In the memory, the magnetic storage elements 10 are disposed near the intersections of the first and second wiring. COPYRIGHT: (C)2005,JPO&NCIPI |
