| 摘要 |
PROBLEM TO BE SOLVED: To improve the image quality of a solid-state imaging device and to make the device finer in size by increasing the frame rate of the device. SOLUTION: The solid-state imaging device is provided with photoelectric conversion elements PD which generate light generating charges corresponding to incident light, storage wells 4 which store the light generating charges, and modulating wells 5 which hold the light generating charges transferred from the storage wells 4. The imaging device is also provided with modulation transistors TM which output pixel signals corresponding to the light generating charges in a state where the threshold voltages of channels are controlled by means of the light generating charges held in the modulating wells 5; transfer control elements TT which control the transfer of the light generating charges by changing the potential barriers of transferring routes RT between the storage wells 4 and modulating wells 5; and discharge-of-unnecessary-charge control elements TL which cause the charges overflowing from the storage wells 4 to be discharged through unnecessary-charge discharging routes RL connected to the storage wells 4 during a period, except the period during which the light emitting charges are transferred from the storage wells 4 to the modulating wells 5 by means of the transfer control elements TT by controlling the potential barriers of the routes RL. COPYRIGHT: (C)2005,JPO&NCIPI
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