| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser element whose operation stability is superior and element resistance is low, and to provide its simple manufacturing method. SOLUTION: The upper part p-type DBR of the surface emitting semiconductor laser element 40 is formed as an upper case mesa post 58. An etching stop layer, a lower part p-type DBR, an upper part clad layer, an active layer, and a lower part clad layer, are formed as a lower berth mesa post 60 whose diameter is larger than that of the upper case mesa post. Between the upper case clad layer and the etching stop layer excepting a circular region in the center, its peripheral AlGaAs layer is selectively and annularly oxidized, and a current constriction layer which is converted into an Al oxide layer 64 is formed. A contact layer is extended therethrough continuously on the upper surface and the side surface of the upper case mesa post and etching stop layer on the side of the mesa post, and formation is performed on the upper surface and the side surface of the upper case mesa post and on the etching stop layer through the contact layer. COPYRIGHT: (C)2005,JPO&NCIPI
|
