发明名称 Plasma processing system
摘要 A processing system having a processing chamber that includes a substrate holder and an electrode. The processing system can include a pressure control system, gas supply system, and monitoring system. A multi-frequency RF source is coupled to the electrode using a reduced-element matching network having a single variable element. The multi-frequency RF source is set to a first frequency to ignite a plasma and to a second frequency to maintain the plasma.
申请公布号 US2005069651(A1) 申请公布日期 2005.03.31
申请号 US20030673514 申请日期 2003.09.30
申请人 TOKYO ELECTRON LIMITED;ADVANCED ENGERGY INDUSTRIES, INC. 发明人 MIYOSHI HIDEAKI;DHARMASENA GEMUNU RANJITH;HIGASHIURA TSUTOMU;GILMORE JACK A.;OSSELBURN JOSEPH J.;BEIZER THERESA
分类号 H01J37/32;H01L21/205;H01L21/3065;H01L21/324;H01L21/42;(IPC1-7):H01L21/324 主分类号 H01J37/32
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