发明名称 |
Plasma processing system |
摘要 |
A processing system having a processing chamber that includes a substrate holder and an electrode. The processing system can include a pressure control system, gas supply system, and monitoring system. A multi-frequency RF source is coupled to the electrode using a reduced-element matching network having a single variable element. The multi-frequency RF source is set to a first frequency to ignite a plasma and to a second frequency to maintain the plasma.
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申请公布号 |
US2005069651(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20030673514 |
申请日期 |
2003.09.30 |
申请人 |
TOKYO ELECTRON LIMITED;ADVANCED ENGERGY INDUSTRIES, INC. |
发明人 |
MIYOSHI HIDEAKI;DHARMASENA GEMUNU RANJITH;HIGASHIURA TSUTOMU;GILMORE JACK A.;OSSELBURN JOSEPH J.;BEIZER THERESA |
分类号 |
H01J37/32;H01L21/205;H01L21/3065;H01L21/324;H01L21/42;(IPC1-7):H01L21/324 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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