METHODS AND APPARATUS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTEM AND DEPOSITION SYSTEMS AND METHODS INCLUDING THE SAME
摘要
Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber. A buffer gas supply system is adapted to supply a flow of a buffer gas between the interior surface and at least a portion of the process gas such that the flow of the buffer gas forms a gas barrier layer to inhibit contact between the interior surface and components of the process gas when the process gas is disposed in the reaction chamber.
申请公布号
WO2005028701(A2)
申请公布日期
2005.03.31
申请号
WO2004US04943
申请日期
2004.02.19
申请人
CREE, INC.;SUMAKERIS, JOSEPH, JOHN;PAISLEY, MICHAEL, JAMES;O'LOUGHLIN, MICHAEL, JOHN
发明人
SUMAKERIS, JOSEPH, JOHN;PAISLEY, MICHAEL, JAMES;O'LOUGHLIN, MICHAEL, JOHN