发明名称 |
Semiconductor memory device having a temporary memory for each of one or more memory banks each having several cells for storing data |
摘要 |
<p>The semiconductor memory device (10) has at least one, preferably at least two, memory banks (12). The or each memory bank has several memory cells for storing data. At least one temporary memory (14) is provided for temporarily storing data read out from at least one memory cell. One temporary memory is respectively associated with each memory bank. The data are preferably read out after a given number of time units. Independent claims also cover a method of operating the device.</p> |
申请公布号 |
DE10339946(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
DE2003139946 |
申请日期 |
2003.08.29 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FIBRANZ, HEIKO;KHO, REX;PLAN, MANFRED;TAEUBER, ANDREAS |
分类号 |
G11C7/10;G11C11/4093;(IPC1-7):G11C7/00;G11C11/407 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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