| 摘要 |
PROBLEM TO BE SOLVED: To shorten the time required for burn-in for actualizing potential defects, in the screening method of a semiconductor device. SOLUTION: A gate insulation film 102 and a conductive film 104 are formed sequentially on the surface of a silicon wafer 100 to form a structure 106. A stress voltage is applied to the structure by making a first voltage applying terminal 110 of one potential touch the rear surface of the wafer and making a second voltage applying terminal 112 of the other potential, different from one potential touch and moreover becomes the other potential the surface of the conductive film. COPYRIGHT: (C)2005,JPO&NCIPI |
