STRUCTURE OF MAGNETIC MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a means of ensuring correct writing using an MRAM memory cell. SOLUTION: There is included a magnetic memory cell. The magnetic memory cell includes a reference layer (320) having a preset magnetization. A barrier layer (330) is formed adjacent to the reference layer (320). A sense layer (340) is formed adjacent to the barrier layer (330). A first conductive write line (310) is electrically connected to the reference layer (320). The magnetic memory cell further includes a second conductive write line (350) having a gap, the gap being filled by at least a portion of the sense layer (340). A write current conducting through the second conductive write line (350) is at least partially conducted through the portion of the sense layer (340). The write current raises a temperature of the sense layer (340). COPYRIGHT: (C)2005,JPO&NCIPI