| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for effectively suppressing inter-FG capacitance coupling. SOLUTION: This semiconductor device is provided with a semiconductor substrate 11 having first and second element forming parts 12 parted by an element separating groove 13, first and second lower gate insulating films 21 formed on the first and second element forming parts, first and second FG22a formed on the first and second lower gate insulating films, an element separation insulating film 31 formed in at least the element separating groove, and formed with a recess on the upper face, an upper gate insulating film 23 formed on the surfaces of the first and second FG, and a CG line 26 having parts formed so as to be faced to the first and second FG through the upper gate insulating film and a part formed in the recess. The whole side face of the first FG faced to the second FG is matched with the side face parted by the element separating groove of the first element forming part, and the whole side face of the second FG faced to the first FG is matched with the side face parted by the element separating groove of the second element forming part. COPYRIGHT: (C)2005,JPO&NCIPI
|
