发明名称 |
Double density MRAM with planar processing |
摘要 |
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
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申请公布号 |
US2005068806(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20040991876 |
申请日期 |
2004.11.18 |
申请人 |
HURST ALLAN T.;SATHER JEFFREY;GADBOIS JASON B. |
发明人 |
HURST ALLAN T.;SATHER JEFFREY;GADBOIS JASON B. |
分类号 |
G11C11/15;H01L27/22;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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