发明名称 Asynchronous pseudo SRAM and access method therefor
摘要 A semiconductor integrated circuit device includes an address buffer which receives an address signal that indicates an address of a memory cell array, a latch circuit which latches the data, and an address transition detection circuit which detects transition of the address. During the access operation of the memory cell array, an address at the operation start time is latched by the latch circuit. After the end of the operation of the memory cell array, an address that is currently input to the address buffer is latched by the latch circuit. If the received address signal is data different from the latch data, a control signal that controls the cycle operation of the memory cell array for a predetermined period is generated on the basis of the detection result from the address transition detection circuit.
申请公布号 US2005068837(A1) 申请公布日期 2005.03.31
申请号 US20040762459 申请日期 2004.01.23
申请人 TAKEUCH YOSHIAKI;OIKAWA KOHEI 发明人 TAKEUCH YOSHIAKI;OIKAWA KOHEI
分类号 G11C11/22;G11C11/403;(IPC1-7):G11C8/00 主分类号 G11C11/22
代理机构 代理人
主权项
地址