| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for the use of an exposure light source at ≤160 nm, in particular, F<SB>2</SB>excimer laser light (at 157 nm), and specifically, to provide a positive resist composition which suppresses development defects, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition contains: (A) a fluorine-containing resin which has such a structure that a fluorine atom is introduced by substitution in the main chain of the polymer skeleton, which has a group expressed by a specified structure and which is decomposable by the effect of an acid to increase the solubility with an alkaline developing solution; (B) a compound which generates an acid by irradiation with active rays; and (C) at least two basic compounds. The method for forming a pattern is carried out by using the composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
