| 摘要 |
PROBLEM TO BE SOLVED: To surely remove a resist residue and polymer or the like at a hole bottom part while suppressing the excess etching of an inter-layer film in the cleaning of a hole formed on the inter-layer film. SOLUTION: After forming an oxide film 12 on a substrate 10, dry etching is executed to the oxide film 12 with a resist pattern 13 as a mask and a contact hole 14 is formed. After removing the resist pattern 13 by ashing, the substrate 10 is cleaned by using ammonium phosphate cleaning liquid and thus the residue 15 at the hole bottom part or the like is removed. COPYRIGHT: (C)2005,JPO&NCIPI
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