| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory wherein the increase of its threshold voltage is prevented and it operates in a low threshold voltage at a high speed, with respect to the semiconductor memory of a logical circuit portion and a nonvolatile memory portion being mixed with each other therein. SOLUTION: The manufacturing method of the semiconductor memory has a process for forming on a silicon substrate 101 a trapping film 102, an n-type impurity diffusion layer 104 of its memory element portion, and an insulation film 105 present on the diffusion layer of its memory element portion; a process for after forming extensively a first polycrystal silicon film 106, forming a gate electrode 106G of its memory element portion; a process for after forming extensively a silicon oxide film 107, removing successively the silicon oxide film 107, the first polycrystal silicon film 106, and the trapping film 102 which are present in its logical circuit portion; a process for after forming a gate insulation film 108 in its logical circuit portion, forming extensively a second polycrystal silicon film 109 and forming concurrently by etching the film 9 a shielding film 109S of its memory element portion and a gate electrode 109G of its logical circuit portion; and a process for forming successively low-concentration diffusion layers 111, sidewalls 110, and high-concentration diffusion layers 112 in its logical circuit portion. COPYRIGHT: (C)2005,JPO&NCIPI
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