| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a magnetoresistive element where data can be written in with a smaller current. SOLUTION: Either line 10 of a word line and a bit line sandwiching a TMR element of MRAM between them is so formed as to make its side closer to the TMR element than its other side wider in line width than the other side, and to be trapezoidal in cross section. By this setup, a uniform magnetic field can be generated by this line more efficiently toward the TMR element than by a conventional line which is rectangular or square in cross section and set equal in current density to the above line, and a writing current can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
|
