发明名称 Plating method, plating apparatus and interconnects forming method
摘要 The present invention provides a plating method and a plating apparatus which can securely form a metal film (protective film) by electroless plating on the exposed surfaces of a base metal, such as interconnects without the formation of voids in the base metal. The plating method including providing a semiconductor device having an embedded interconnect structure, carrying out pretreatment of interconnects with a pre-treatment liquid containing a surface activating agent for the interconnects, carrying out catalytic treatment of the interconnects with a catalytic treatment liquid containing catalyst metal ions and an excessive etching inhibitor for the interconnects, and forming a protective film by electroless plating selectively on the surfaces of the interconnects.
申请公布号 US2005069646(A1) 申请公布日期 2005.03.31
申请号 US20040864496 申请日期 2004.06.10
申请人 INOUE HIROAKI;SUSAKI AKIRA 发明人 INOUE HIROAKI;SUSAKI AKIRA
分类号 C23C18/16;C23C18/18;C23C18/32;C23C18/50;H01L21/288;H01L21/768;(IPC1-7):B05D3/04;B05D3/10;H01L21/44 主分类号 C23C18/16
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