发明名称 |
Plating method, plating apparatus and interconnects forming method |
摘要 |
The present invention provides a plating method and a plating apparatus which can securely form a metal film (protective film) by electroless plating on the exposed surfaces of a base metal, such as interconnects without the formation of voids in the base metal. The plating method including providing a semiconductor device having an embedded interconnect structure, carrying out pretreatment of interconnects with a pre-treatment liquid containing a surface activating agent for the interconnects, carrying out catalytic treatment of the interconnects with a catalytic treatment liquid containing catalyst metal ions and an excessive etching inhibitor for the interconnects, and forming a protective film by electroless plating selectively on the surfaces of the interconnects.
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申请公布号 |
US2005069646(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20040864496 |
申请日期 |
2004.06.10 |
申请人 |
INOUE HIROAKI;SUSAKI AKIRA |
发明人 |
INOUE HIROAKI;SUSAKI AKIRA |
分类号 |
C23C18/16;C23C18/18;C23C18/32;C23C18/50;H01L21/288;H01L21/768;(IPC1-7):B05D3/04;B05D3/10;H01L21/44 |
主分类号 |
C23C18/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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