发明名称 CONTROLLED FABRICATION OF GAPS IN ELECTRICALLY CONDUCTING STRUCTURES
摘要 A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.
申请公布号 WO2004077503(A3) 申请公布日期 2005.03.31
申请号 WO2004US02502 申请日期 2004.01.29
申请人 PRESIDENT AND FELLOWS OF HARVARD COLLEGE 发明人 GOLOVCHENKO, JENE, A.;SCHURMANN, GREGOR, M.;KING, GAVIN, M.;BRANTON, DANIEL
分类号 B81B1/00;B81C99/00;H01L;H01L21/66 主分类号 B81B1/00
代理机构 代理人
主权项
地址