发明名称 |
SCHOTTKY BARRIER INTEGRATED CIRCUIT |
摘要 |
A Schottky barrier integrated circuit is disclosed, the circuit having at least one PMOS device or at least one NMOS device, at least one of the PMOS device or NMOS device having metal source-drain contacts forming Schottky barrier or Schottky-like contacts to the semiconductor substrate. The device provides a new distribution of mobile charge carriers in the bulk region of the semiconductor substrate, which improves device and circuit performance by lowering gate capacitance, improving effective carrier mobility, mu reducing noise, reducing gate insulator leakage, reducing hot carrier effect and improving reliability. |
申请公布号 |
WO2005029583(A2) |
申请公布日期 |
2005.03.31 |
申请号 |
WO2004US30710 |
申请日期 |
2004.09.17 |
申请人 |
SPINNAKER SEMICONDUCTOR, INC.;SNYDER, JOHN, P.;LARSON, JOHN, M. |
发明人 |
SNYDER, JOHN, P.;LARSON, JOHN, M. |
分类号 |
H01L21/336;H01L21/8238;H01L27/095;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|