Semiconductor memory device allowing accurate burn-in test

摘要

An insulated gate type field effect transistor in a memory cell array is a transistor having a gate insulating film which is thicker than a gate insulating film of an insulated gate type field effect transistor in an array peripheral circuit. DRAM (Dynamic Random Access Memory) cell-based semiconductor memory device can be implemented which allows a burn-in test to be accurately performed without degrading sensing operation characteristics even under a low power supply voltage.