| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain superior transistor characteristics, and at the same time, to reduce off-leak currents. <P>SOLUTION: A substrate constituted by laminating a plurality of layers upon another is provided with a semiconductor layer 1a, and a high-temperature oxidized film layer 12b which is formed as the substrate of the semiconductor layer 1a and has a thickness of≥50 nm. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
