| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an active matrix substrate for attaining high display characteristics by suppressing change (unevenness) of a capacity cgd between a gate and a drain of each TFT, even when the unevenness occurs in size and shape of a semiconductor layer or at the formation position. <P>SOLUTION: The active matrix substrate 1 includes the semiconductor layer 5 formed on a gate electrode 11, TFT 13 provided with a source electrode 7 and a drain electrode 6 formed so as to be superposed on the semiconductor layer 5, and a pixel electrode 8 connected to the drain electrode 6. A region for forming the drain electrode sandwiched between two source electrodes 7a/7b is provided corresponding to the formation region of the semiconductor layer 5, and the drain electrode 6 extends from a connection part with the pixel electrode 8 in the region for forming the drain electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
