DEPOSITING METHOD FOR INORGANIC ALIGNMENT LAYER, INORGANIC ALIGNMENT LAYER, SUBSTRATE FOR ELECTRONIC DEVICE, LIQUID CRYSTAL PANEL, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide an inorganic alignment layer having light fastness and capable of generating a pretilt angle, to provide a substrate for an electronic device, a liquid crystal panel and the electronic equipment provided with the inorganic alignment layer and to provide a depositing method for the inorganic alignment layer. SOLUTION: In the depositing method for the inorganic alignment layer wherein the inorganic alignment layer is deposited on a base material by a magnetron sputtering method, pressure of an atmosphere in the vicinity of the base material is made to be≤5×10-2Pa, plasma is made to collide against a target provided opposite to the base material to pull out sputtering particles, the base material is irradiated with the sputtering particles in a direction inclined at a prescribed angleθsto the vertical direction of the surface of the base material on which the inorganic alignment layer is to be deposited and the inorganic alignment layer constituted principally of an inorganic material is deposited on the base material. The prescribed angleθsis≥60°. The distance between the base material and the target is≥150 mm. COPYRIGHT: (C)2005,JPO&NCIPI