发明名称 |
HARD THICK FILM, AND METHOD FOR FORMING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a hard film which can mitigate internal stresses sufficiently even when the thickness is≥10μm, or≥5μm up to several hundredsμm in the case of a TiN film, and can be formed even by a method such as an ion-plating method in which a raw material of the film is limited. SOLUTION: Internal stresses are reduced and peeling is suppressed by a hard thick film of a structure in which a stress mitigating layer by a metal layer is placed in a metal nitride film with a predetermined thickness at a predetermined interval. The hard thick film is formed by repeating a step A: of forming the metal nitride layer for a predetermined time, and a step B: of forming a metal layer for a predetermined time. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005082822(A) |
申请公布日期 |
2005.03.31 |
申请号 |
JP20030313397 |
申请日期 |
2003.09.05 |
申请人 |
ION ENGINEERING RESEARCH INSTITUTE CORP |
发明人 |
ANDO AKIRO;NIE TOMOTSUGU;OKUI MANABU;WATANABE HISASHI;OTANI SABURO |
分类号 |
B23B27/14;C23C14/06;C23C14/32;F01L1/14;F02F5/00;(IPC1-7):C23C14/06 |
主分类号 |
B23B27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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