发明名称 HARD THICK FILM, AND METHOD FOR FORMING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a hard film which can mitigate internal stresses sufficiently even when the thickness is≥10μm, or≥5μm up to several hundredsμm in the case of a TiN film, and can be formed even by a method such as an ion-plating method in which a raw material of the film is limited. SOLUTION: Internal stresses are reduced and peeling is suppressed by a hard thick film of a structure in which a stress mitigating layer by a metal layer is placed in a metal nitride film with a predetermined thickness at a predetermined interval. The hard thick film is formed by repeating a step A: of forming the metal nitride layer for a predetermined time, and a step B: of forming a metal layer for a predetermined time. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005082822(A) 申请公布日期 2005.03.31
申请号 JP20030313397 申请日期 2003.09.05
申请人 ION ENGINEERING RESEARCH INSTITUTE CORP 发明人 ANDO AKIRO;NIE TOMOTSUGU;OKUI MANABU;WATANABE HISASHI;OTANI SABURO
分类号 B23B27/14;C23C14/06;C23C14/32;F01L1/14;F02F5/00;(IPC1-7):C23C14/06 主分类号 B23B27/14
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