发明名称 Substrate having built-in semiconductor apparatus and manufacturing method thereof
摘要 A substrate having a built-in semiconductor apparatus includes: a semiconductor apparatus which comprises a first semiconductor chip having a first electrode pad formed on a main surface thereof, a protruding portion which is in contact with the first semiconductor chip and protrudes from a side surface of the first semiconductor chip to the outside, an apparatus wiring portion which is provided so as to extend from the first electrode pad onto a surface of the protruding portion, a conductive portion which is in connected with the apparatus wiring portion and provided on the apparatus wiring portion, and a sealing layer which covers the main surface and the surface of the protruding portion so as to expose a top face of the conductive portion; an insulating layer in which the semiconductor apparatus is embedded; an external terminal provided on the insulating layer; and a substrate wiring portion which electrically connects the conductive portion with the external terminal.
申请公布号 US2005067717(A1) 申请公布日期 2005.03.31
申请号 US20030742940 申请日期 2003.12.23
申请人 SHIZUNO YOSHINORI 发明人 SHIZUNO YOSHINORI
分类号 H01L23/12;H01L21/60;H01L23/498;H01L23/52;H01L23/538;H01L25/04;H01L25/10;H01L25/18;(IPC1-7):H01L23/48 主分类号 H01L23/12
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