METHOD FOR MANUFACTURING MASK PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, MANUFACTURING SYSTEM OF MASK PATTERN, CELL LIBRARY, AND METHOD FOR MANUFACTURING PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask pattern for reducing the process time of PPC (process proximity correction) without increasing a chip area.

SOLUTION: The method for manufacturing a mask pattern includes steps of: subjecting each of a plurality of cell patterns stored in a first cell library to the process proximity correction to prepare a second cell library to store a plurality of corrected cell patterns; arranging a first corrected cell pattern and a second corrected cell pattern as one of the plurality of corrected cell patterns so that the respective edges are brought into contact with, are adjacent to or are overlapped on each other; extracting the boundary pattern near the boundary of the first corrected cell pattern and the second corrected cell pattern; and subjecting the boundary pattern to the process proximity correction.

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