| 摘要 |
PROBLEM TO BE SOLVED: To provide a split gate type memory device having a structure agreeing with cell condensation, and to provide a method of manufacturing split gate type memory device by which the problem of erroneous alignment caused by photolithography can be eliminated. SOLUTION: The split gate type memory device is provided with a gate insulating film formed on a semiconductor substrate, and a spacer-like floating gate and a spacer-like dummy pattern which are formed on the gate insulating film with their curved surfaces on the outside and are separated from each other. On the side walls on which the spacer-like floating gate and spacer-like dummy patterns are faced to each other, a pair of insulating film spacers is formed in a contacting state. On the inside of the insulating film spacers, a control gate is formed in a self-aligning way. In addition, a tunnel insulating film is interposed between the spacer-like floating gate and control gate, and source and drain regions are formed in the semiconductor substrate on the outside of the spacer-like floating gate and spacer-like dummy pattern. COPYRIGHT: (C)2005,JPO&NCIPI
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