发明名称 RADIATION DETECTOR
摘要 PROBLEM TO BE SOLVED: To avoid a reduction in performance caused by connecting a lead line for feeding a bias voltage to a common electrode for applying the bias voltage to a radiation sensitive type semiconductor. SOLUTION: In a radiation detector, a buffer pedestal 13 having an electric insulation is provided outside of a radiation detection effective area on a front side of a radiation sensitive type semiconductor 1. A lead line 3 for feeding the bias voltage is connected to a lead line connection region 2A which is a portion positioned on the buffer pedestal 13 out of a surface of a common electrode 2 for applying the bias voltage formed in such a shape as to cover above the buffer pedestal 13. Therefore, an impact applied when the lead line 3 is connected to the common electrode 2 is relieved by the buffer pedestal 13. As a result, it is possible to prevent damages of the semiconductor 1 or an intermediate layer 7 leading to a cause of a reduction in performance. Further, as the buffer pedestal 13 is outside of the radiation detection effective area, it is possible to prevent a radiation detection function from being impaired by providing the buffer pedestal 13. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005086059(A) 申请公布日期 2005.03.31
申请号 JP20030317965 申请日期 2003.09.10
申请人 SHIMADZU CORP 发明人 SATO KENJI;SUZUKI JUNICHI;NAGAFUNE SHINYA;WATAYA KOJI;KISHIMOTO SAKATOSHI
分类号 G01T1/24;H01L27/14;H01L27/146;H01L31/00;H01L31/04;H01L31/08;H01L31/09;H01L31/115;H04N5/32;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L27/14 主分类号 G01T1/24
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