ION IMPLANTATION METHOD OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To remove particle or the like adhering to a surface of a semiconductor wafer by using an ion implantation device when element ion is implanted from the surface of the semiconductor wafer. SOLUTION: An element ion implantation layer is formed in a position of a prescribed depth from the surface by implanting prescribed element ion from the surface of the semiconductor wafer. The ion implantation process has a plurality of divided implantation processes. An ion irradiation process is executed at least after the first divided implantation process. Alternately, an ion irradiation process is executed after the last divided implantation process. As a result, an element ion implantation layer is formed in a position of a prescribed depth from the surface of the semiconductor wafer and particle adhering to the surface of the semiconductor wafer is removed. Ion implantation failure caused by adhering contaminant can be prevented. COPYRIGHT: (C)2005,JPO&NCIPI