SEMICONDUCTOR LIGHT RECEIVER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light receiver which can have an excellent characteristic and can be manufactured with high reproducibility and a high yield. SOLUTION: The semiconductor light receiver has an n+type InP layer 66 formed on a Si-InP substrate 60, an i type InGaAs light absorptive layer 78 formed on the n+type InP layer 66, an n+type InP field-drop layer 82 formed on the light absorptive layer 78, an i type InP multiplication layer 84 formed on the field drop layer 82, and a p+type InP layer 74 formed on the multiplication layer 84. An n type impurity carrier concentration in the field drop layer 82 is higher than a p type impurity carrier concentration in the InP layer 74. COPYRIGHT: (C)2005,JPO&NCIPI