发明名称 MONITORING METHOD, EXPOSURE METHOD, ELECTRONIC ELEMENT MANUFACTURING METHOD, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a monitoring method, exposure method, electronic element manufacturing method, and program which can reduce the dimensional errors in two directions. SOLUTION: An amount of electric charges of a charged particle beam which has passed through a pattern for monitoring is measured (Step ST1). Based on the measurement results, dimensional errors in the x and y directions of a transferred pattern, with respect to designed dimensions, are found (Step ST2). By adjusting astigmatism and exposure energy of the charged particle beam according to the dimensional errors in the x and y directions, a beam profile in the x and y directions of the charged particle beam which has passed through the mask is corrected. Since the width of the transferred pattern is regarded as the width at a certain threshold in the beam profile, astigmatism and exposure energy of the charged particle beam are adjusted, for example, by increasing or decreasing that width, according to the dimensional errors (Step ST3). After thus correcting the astigmatism and exposure energy, exposure is made under the conditions after correcting. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005085927(A) 申请公布日期 2005.03.31
申请号 JP20030315239 申请日期 2003.09.08
申请人 SONY CORP 发明人 HANE HIROKI;NOUDO SHINICHIRO
分类号 G03F7/20;H01J37/153;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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