SEMICONDUCTOR MEMORY DEVICE AND ELECTRIC DEVICE WITH THE SAME

摘要

A semiconductor memory device and an electric device with the same are provided to suppress the increase of a memory chip area by reducing the area of a row decoder. A cell array(1) has an electrically erasable nonvolatile memory cell arranged at each cross part of a plurality of bit lines and word lines, and a plurality of memory cells forms a NAND cell unit, and a plurality of blocks constituted with a plurality of NAND cell units arranged in parallel with a word line are arranged in a bit line direction. Row decoders(2a,2b) select the block of the cell array. The row decoder has a transmission transistor array(21) where transistors to transmit a word line driving voltage are arranged. A first decoder part(22) is prepared in each transmission transistor array, and drives the transmission transistor array selectively by supplying a boosting voltage. And a second decoder part(23) selects the block.