发明名称 |
CRYSTAL PRODUCTION METHOD FOR GALLIUM OXIDE-IRON MIXED CRYSTAL |
摘要 |
A crystal production method for gallium oxide-iron mixed crystal (Ga2-xFexO3) allowing spin information buried in a solid to be read by using the magnetoelectric effect. The crystal production method for gallium oxide- iron mixed crystal is characterized in that a single crystal of Ga2- xFexO3 having a crystal structure of monoclinic system is produced by a floating zone melting method in which a floating zone is formed between tips of specimen rods of Ga2-xFexO3 vertically aligned by heating the tips in a gas atmosphere by means of heat sources arranged confocally. By this method, a high-quality, uniform, large Ga2-x FexO3 crystal is produced.
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申请公布号 |
KR20050030621(A) |
申请公布日期 |
2005.03.30 |
申请号 |
KR20047011915 |
申请日期 |
2004.07.31 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
KANEKO, YOSHIO;MIYASAKA, SHIGEKI;TOKURA, YOSHINORI |
分类号 |
C30B29/22;C30B13/00;C30B13/22;H01L41/20;(IPC1-7):C30B29/22 |
主分类号 |
C30B29/22 |
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