| 摘要 |
A method of measuring the degree of alignment in a semiconductor device is provided to check clearly an outer box in a predetermined measurement by securing a stepped portion between the outer box and a substrate using voids. A pad oxide layer(43) and a pad nitride layer(45) are sequentially formed on a semiconductor substrate(41). A trench is formed in the substrate by performing a lithographic process on the resultant structure using an isolation mask as an etching mask. An outer box is formed by forming an HDPCVD(High Density Plasma Chemical Vapor Deposition) oxide layer(49) on the resultant structure including the trench. At this time, a void(100) is formed in the trench. An inner box is formed within the outer box.
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