SIC METAL-SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND PROCESS FOR THE SAME

摘要

An SiC MESFET(MEtal-Semiconductor Field Effect Transistor) and a manufacturing method thereof are provided to increase breakdown voltage and to prevent field enhancement by using a dielectric bridge structure. An epitaxial layer is formed on a SiC substrate. A plurality of source and drain electrodes(14,12) are alternately spaced apart from each other on the epitaxial layer. Gate electrodes(10) are formed between the source and drain electrodes. A drain pad(13) for connecting the drain electrodes with each other is formed on the substrate. A gate pad(11) for connecting the gate electrodes with each other is formed on the substrate. A source pad(15) for connecting the source electrodes with each other is spaced apart from the drain and gate pads on the substrate. A source connecting part(16) is used for connecting the source pad with source electrodes. A dielectric bridge(20) made of a low dielectric material is formed between the drain electrode, the gate electrode, the drain pad, the gate pad and the source connecting part.