| 摘要 |
1,056,653. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. Oct. 29, 1965 [Dec. 7. 1964], No. 45846/65. Heading H1K. In a method of simultaneously producing a plurality of planar diodes in a wafer 1 of semiconductor material, Fig. 1, the diodes are contacted by depositing a layer 5 of metal over the whole of the oxide masking layer 2, alloying the metal layer to the diffused regions 4, and then scribing and breaking the wafer into individual diodes. The metal layer may be of gold, nickel or aluminium and the vapour deposited layer may be thickened by electrolytic deposition. The metal layer may be used directly for making contact or may have a connecting wire attached. A pattern of grooves 7, Fig. 3 (not shown), may be etched in oxide layer 2 after the diffusion of regions 4 so that the scribing diamond penetrates metal layer 5 and directly contacts wafer 1. |
