发明名称
摘要 A positive photoresist composition including (A) 100 parts by weight of an alkali-soluble novolak resin, and based thereon; (B) 5 to 50 parts by weight of an alkali-soluble acrylic resin containing, as s, 10 to 80% by weight of a unit of a radical-polymerizable compound having an alcoholic hydroxyl group and 3 to 50% by weight of at least one of a unit of a radical-polymerizable compound having a carboxyl group and a unit of a radical-polymerizable compound having a phenolic hydroxyl group; (C) 5 to 100 parts by weight of a quinonediazide group-containing compound; and (D) a solvent, is provided. This composition has a good adhesion to substrates at the time of development and a good plating solution resistance and moreover can be well wetted with plating solutions, can be well developed with alkali developing solutions and can be well stripped from substrates at the resist unexposed areas, and is suited for the formation of thick films suitable as bump forming materials.
申请公布号 JP3633179(B2) 申请公布日期 2005.03.30
申请号 JP19970027211 申请日期 1997.01.27
申请人 发明人
分类号 G03F7/004;C08G8/08;G03F7/022;G03F7/023;G03F7/033;H01L21/027;(IPC1-7):G03F7/023 主分类号 G03F7/004
代理机构 代理人
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