| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stress controlled mask having high pattern accuracy, its manufacturing method and a method for manufacturing a semiconductor device capable of transferring a fine pattern with high accuracy. Ž<P>SOLUTION: The method for manufacturing a mask comprises a step for calculating the initial inner stress distribution of a thin film having holes 12 in a specified pattern from the data of material, thickness distribution and pattern of the thin film, a step for calculating a first displacement amount of a calculation point moving to valance the stress, a step for calculating a second displacement amount of the calculation point moving the balance the stress when dummy holes 13 for intercepting charged particle beams are added in dummy patterns, a step for determining a dummy pattern where the second displacement amount falls within an allowable range, a step for making holes transmitting the charged particle beams within a specified incident angle in the thin film, and a step for forming dummy holes penetrating the thin film at angles different from these of the holes in a predetermined pattern. A mask manufactured by the method and a method for manufacturing a semiconductor device employing such a mask are also provided. Ž<P>COPYRIGHT: (C)2003,JPO Ž</p> |
