COMPOSITION FOR FORMING FILM, PROCESS FOR PREPARING THE SAME, MATERIAL FOR FORMING INSULATING FILM, PROCESS FOR FORMING FILM AND SILICA FILM

摘要

Provided are a film forming composition which has a low relative dielectric constant and is excellent in chemical resistance, adhesion and insulation, its preparation method, a material for forming an insulating layer containing the composition, a method for forming a film by using the composition, and a silica-based film obtained by the method. The film forming composition comprises 100 parts by weight of a condensate obtained by the hydrolysis condensation of at least one silane compound selected from a compound represented by R_a Si(OR^1)_(4-a), a compound represented by Si(OR^2)4 and a compound represented by R^3_b (R^4 O)_(3-b) Si-(R^7)_d - Si(OR^5)_(3-c) R^6_c and a cyclic silane compound represented by the formula 4; 5-200 parts by weight of a compound which is compatible with or dispersed in the condensate and has a decomposition temperature of 200-400 deg.C; and an organic solvent, wherein R is H, F or a monovalent organic group; R^1 is a monovalent organic group; a is 1 or 2; R^2 is a monovalent organic group; R^3, R^4, R^5 and R^6 are identical or different one another and are a monovalent organic group; b and c are identical or different one another and are a number of 0-2; R^7 is O, a phenylene group or -(CH2)m- (wherein m is an integer of 1-6); d is 0 or 1; X and Y are identical or different one another and are H or a monovalent organic group; and n is an integer of 2-8.