A METHOD FOR FORMING A CONTACT HOLE OF A SEMICONDUCTOR DEVICE

摘要

A method of forming a contact hole of a semiconductor device is provided to obtain a predetermined size enough for high integration degree from contact holes with low cost by coating selectively a second photoresist pattern on a first photoresist pattern. A first photoresist pattern(43) with a plurality of uniform openings is formed on a semiconductor substrate with a predetermined layer. The size of each opening is reduced by performing a flow bake on the first photoresist pattern. A second photoresist pattern(45) is selective formed thereon.