发明名称 |
SEMICONDUCTOR STRUCTURE INTEGRATED UNDER A PAD |
摘要 |
An integrated semiconductor structure has a substrate, a semiconductor element located on the substrate, a pad metal, metal layers located between the pad metal and the substrate, and insulation layers that separate the metal layers from one another. The pad metal extends over at least-part of the semiconductor element. Below the surface of the pad metal, at least the top two metal layers include two or more adjacent interconnects. |
申请公布号 |
EP1518272(A1) |
申请公布日期 |
2005.03.30 |
申请号 |
EP20030761414 |
申请日期 |
2003.06.12 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BAUER, ROBERT;ERTLE, WERNER;FROHNMUELLER, TILL;GOLLER, BERND;GREIDERER, REINHARD;NAGLER, OLIVER;SCHMECKEBIER, OLAF;STADLER, WOLFGANG |
分类号 |
H01L23/485 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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