CMOS IMAGE SENSOR AND ITS FABRICATING METHOD

摘要

A CMOS(Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method thereof are provided to minimize dark current and leakage current by spacing an ion-implanted region apart from an isolation region using an enhanced ion-implantation mask. A CMOS image sensor includes a semiconductor substrate with an isolation region, transistors(420,430,440) formed on the substrate, and an active region. The active region(460) is formed between the transistor and the isolation layer. The active region is spaced apart from a boundary of the isolation region. A predetermined ion-implantation mask is used when an ion-implantation for defining the active region is performed on the substrate. The predetermined ion-implantation mask covers the boundary of the isolation layer and a predetermined portion of the active region.