Magnetic random access memory comprising MTJ layer and method of manufacturing

摘要

Provided is an MRAM having a cell that comprises a transistor and an MTJ layer connected to the transistor, the MTJ layer having a tunneling film which has a uniform thickness, and a method of manufacturing the MRAM. The MTJ layer comprises: a lower electrode; a lower magnetic film; a tunneling film having a uniform thickness without waves; and an upper magnetic film, and the lower electrode comprises a first lower electrode and an amorphous second lower electrode. An amorphous flattening film can be further formed between the lower electrode and the lower magnetic film.