发明名称 |
A method of fabrication of a substrate for an epitaxial growth |
摘要 |
<p>The present invention relates to a method of fabrication of a substrate for an epitaxial growth, comprising: obtaining a relaxed epitaxial base layer on an auxiliary substrate. It is the object of the present invention to fabricate substrates which allow for more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter, wherein the material can be grown with a high thermodynamic and crystallographic stability. The object is solved by a method of the above-mentioned type which further comprises: transferring at least a part of the epitaxial base layer onto a carrier substrate, forming a base substrate; and further growing of the material of the epitaxial base layer on the carrier substrate. <IMAGE></p> |
申请公布号 |
EP1519409(A1) |
申请公布日期 |
2005.03.30 |
申请号 |
EP20030292377 |
申请日期 |
2003.09.26 |
申请人 |
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
AKATSU, TAKESHI;AULNETTE, CECILE;GHYSELEN, BRUNO |
分类号 |
C30B25/02;C30B29/52;H01L21/20;H01L21/762;(IPC1-7):H01L21/762;C30B25/18 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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