METHOD OF SINGLE CRYSTAL ZNO THIN FILM GROWTH ON SI SUBSTRATE USING NITRIDE INTERMEDIATE LAYER

摘要

A method is provided to acquire an excellent single crystal ZnO thin film by using a nitride intermediate layer. A nitride thin film(20) is grown on a silicon substrate(10). A single crystal ZnO thin film(30) is grown on the nitride thin film, so that defects and contaminants of the single crystal ZnO thin film are minimized. The thickness of the nitride thin film is in a range of 20 to 2000 nm. The nitride thin film and the single crystal ZnO thin film are formed by using sputtering.